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Shop no.1, Hateem Farah Building, Industrial Area 3, Sharjah, UAE
+971 54 247 0608
Shop no.1, Hateem Farah Building, Industrial Area 3, Sharjah, UAE
300.00 AED
2MBI200U4B-120-50 N-Channel Series IGBT Module, 200 A max, 1200 V. The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Shop no.1, Hateem Farah Building, Industrial Area 3, Sharjah P.O.Box 116972 Dubai United Arab Emirates
+971 54 247 0608
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