HGTG30N60A4D IGBT Single Transistor, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins. The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.